STPS10M80CFP datasheet(4/11 Pages) STMICROELECTRONICS

4 / 11 page

Characteristics

STPS10M80C

4/11

Doc ID 018734 Rev 1

Figure 6.

Non repetitive surge peak forward

current versus overload duration

(maximum values, per diode)

Figure 7.

Non repetitive surge peak forward

current versus overload duration

(maximum values, per diode)

100

1.E-03

1.E-02

1.E-01

1.E+00

TO-220AB / I PAK / D PAK

δ = 0.5

t(s)

T = 25 °C

T = 75 °C

T = 125 °C

I (A)

1.E-03

1.E-02

1.E-01

1.E+00

TO-220FPAB

T = 25 °C

T = 75 °C

T = 125 °C

δ = 0.5

t(s)

I (A)

Figure 8.

Relative thermal impedance

junction to case versus pulse

duration

Figure 9.

Relative thermal impedance

junction to case versus pulse

duration (TO-220FPAB)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

Single pulse

TO-220AB / I PAK / D PAK

Z/R

th(j-c)

t (s)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Single pulse

Z/R

th(j-c)

t (s)

TO-220FPAB

Figure 10.

Reverse leakage current versus

reverse voltage applied

(typical values, per diode)

Figure 11.

Junction capacitance versus

reverse voltage applied

(typical values, per diode)

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

1.E+05

2030

5060

I (µA)

V (V)

T = 25 °C

T = 50 °C

T = 75 °C

T = 125 °C

T = 150 °C

T = 100 °C

100

1000

100

F = 1 MHz

= 30 mV

T = 25 °C

osc

RMS

C(pF)

V (V)

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