2SB601 datasheet(2/3 Pages) ISC

部件名	2SB601

功能描述	Silicon PNP Power Transistors

PDF	3 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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2 / 3 page

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB601

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-emitter sustaining voltage

IC=-3A, IB1=-3mA,L=1mH

-100

VCEsat

Collector-emitter saturation voltage

IC=-3A ,IB=-3mA

-1.5

VBEsat

Base-emitter saturation voltage

IC=-3A ,IB=-3mA

-2.0

ICBO

Collector cut-off current

VCB=-100V, IE=0

-10

μA

ICEX

Collector cut-off current

VCE=-100V, VBE=-1.5V

Ta=25℃

-10

-1.0

μA

IEBO

Emitter cut-off current

VEB=-5V; IC=0

-3.0

hFE-1

DC current gain

IC=-3A ; VCE=-2V

2000

15000

hFE-2

DC current gain

IC=-5A ; VCE=-2V

500

Cob

Output capacitance

IE=0 ; VCB=-10V,f=0.1MHz

300

Switching times

ton

Turn-on time

0.5

μs

tstg

Storage time

1.0

μs

Fall time

IC=-3A; IB1=-IB2=-3mA

VCC=-50V;RL=17Ω

1.0

μs

hFE-1Classifications

2000-5000

3000-7000

5000-15000

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