2SB601 datasheet(1/3 Pages) ISC

部件名	2SB601

功能描述	Silicon PNP Power Transistors

PDF	3 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

标志

1 / 3 page

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB601

DESCRIPTION

・With TO-220C package

・DARLINGTON

・High DC current gain

・Low collector saturation voltage

APPLICATIONS

・For low-frequency power amplifier and

low-speed switching applications

PINNING

DESCRIPTION

1

Base

2

Collector;connected to

mounting base

3

Emitter

Absolute maximum ratings(Tc=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

-100

V

VCEO

Collector-emitter voltage

Open base

-100

V

VEBO

Emitter-base voltage

Open collector

-7

V

IC

Collector current-DC

-5

A

ICM

Collector current-Pulse

-8

A

IB

Base current-DC

-0.5

A

TC=25℃

30

PT

Total power dissipation

Ta=25℃

1.5

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~150

℃

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