2SB656 datasheet(2/2 Pages) ISC

部件名	2SB656

功能描述	isc Silicon PNP Power Transistors

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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2 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistors

2SB656

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -50mA; RBE= ∞

-160

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= -5mA; IC= 0

-5

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -6A; IB= -0.6A

-2.5

VBE(on)

Base-Emitter On Voltage

IC= -1A; VCE= -5V

-1.5

ICBO

Collector Cutoff Current

VCB= -120V; IE= 0

-0.1

hFE-1

DC Current Gain

IC= -1A; VCE= -5V

200

hFE-2

DC Current Gain

IC= -6A; VCE= -5V

Current-Gain—Bandwidth Product

IC= -1A; VCE= -5V

MHz

hFE Classifications

60-120

100-200

isc Website：www.iscsemi.cn

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