2SB656 datasheet(1/2 Pages) ISC

部件名	2SB656

功能描述	isc Silicon PNP Power Transistors

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistors

2SB656

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -160V(Min)

·High Power Dissipation-

: PC= 125W(Max)@TC=25℃

·Complement to Type 2SD676

APPLICATIONS

·Designed for low frequency power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-160

V

VCEO

Collector-Emitter Voltage

-160

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-12

A

ICM

Collector Current-Peak

-20

A

PC

Collector Power Dissipation

@TC=25℃

125

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

isc Website：www.iscsemi.cn

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