2SB795 datasheet(2/3 Pages) ISC

部件名	2SB795

功能描述	Silicon PNP Power Transistors

PDF	3 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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2 / 3 page

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB794 2SB795

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

2SB794

-60

V(BR)CEO

Collector-emitter

breakdown voltage

2SB795

IC=-10mA ;IB=0

-80

VCEsat

Collector-emitter saturation voltage

IC=-1A ;IB=-1mA

-1.5

VBEsat

Base-emitter saturation voltage

IC=-1A ;IB=-1mA

-2.0

2SB794

VCB=-60V; IE=0

ICBO

Collector

cut-off current

2SB795

VCB=-80V; IE=0

-1.0

μA

IEBO

Emitter cut-off current

VEB=-5V; IC=0

-2.0

hFE-1

DC current gain

IC=-0.5A ; VCE=-2V

1000

hFE-2

DC current gain

IC=-1A ; VCE=-2V

2000

30000

Switching times

ton

Turn-on time

0.5

μs

tstg

Storage time

1.0

μs

Fall time

IC=-1.0A ; IB1=-IB2=-1.0mA

VCC=-50V;RL=50Ω

1.0

μs

hFE-2 Classifications

2000-5000

4000-10000

8000-30000

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