2SB795 datasheet(1/3 Pages) ISC

部件名	2SB795

功能描述	Silicon PNP Power Transistors

PDF	3 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB794 2SB795

DESCRIPTION

・With TO-126 package

・DARLINGTON

・High DC current gain

・Low collector saturation voltage

・Complement to type 2SD985 2SD986

APPLICATIONS

・For use in operating from IC without

predriver ,such as hammer driver

PINNING(See Fig.2)

DESCRIPTION

1

Emitter

2

Collector;connected to

mounting base

3

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2SB794

-60

VCBO

Collector-base voltage

2SB795

Open emitter

-80

V

2SB794

-60

VCEO

Collector-emitter voltage

2SB795

Open base

-80

V

VEBO

Emitter-base voltage

Open collector

-8

V

IC

Collector current (DC)

-1.5

A

ICM

Collector current-peak

-3.0

A

Ta=25℃

1.0

PD

Total power dissipation

TC=25℃

10

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~150

℃

类似零件编号 - 2SB795

制造商	部件名	数据表	功能描述
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