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SW12N65 数据表(PDF) 3 Page - Xian Semipower Electronic Technology Co., Ltd.

部件名 SW12N65
功能描述  N-channel MOSFET
PDF  7 Pages
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制造商  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
网页  http://www.samwinsemi.com
标志 SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SW12N65 数据表(HTML) 3 Page - Xian Semipower Electronic Technology Co., Ltd.

  SW12N65 Datasheet HTML 1Page - Xian Semipower Electronic Technology Co., Ltd. SW12N65 Datasheet HTML 2Page - Xian Semipower Electronic Technology Co., Ltd. SW12N65 Datasheet HTML 3Page - Xian Semipower Electronic Technology Co., Ltd. SW12N65 Datasheet HTML 4Page - Xian Semipower Electronic Technology Co., Ltd. SW12N65 Datasheet HTML 5Page - Xian Semipower Electronic Technology Co., Ltd. SW12N65 Datasheet HTML 6Page - Xian Semipower Electronic Technology Co., Ltd. SW12N65 Datasheet HTML 7Page - Xian Semipower Electronic Technology Co., Ltd.  
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Fig. 1. On-state characteristics
Fig. 2. Transfer characteristics
Fig. 3. On-resistance variation vs.
drain current and gate voltage
Fig. 5. Capacitance characteristics
(Non-Repetitive)
Fig. 6. Gate charge characteristics
Fig. 4. On state current vs.
diode forward voltage
10
0
10
1
10
0
10
1
V
GS
Top :
15.0 V
10.0V
8.0V
7.0V
6.0V
5.5V
5.0V
Bottom: 4.5 V
Notes :
※
1. 250µs Pulse Test
2. T
C = 25℃
V
DS, Drain-Source Voltage [V]
24
68
10
10
-1
10
0
10
1
150
oC
25
oC
-55
oC
Notes :
※
1. V
DS = 40V
2. 250µs Pulse Test
V
GS, Gate-Source Voltage [V]
0
5
10
15
20
25
30
35
0.5
1.0
1.5
V
GS = 20V
V
GS = 10V
Note: T
※
J = 25
℃
I
D, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
-1
10
0
10
1
150℃
Notes :
※
1. V
GS = 0V
2. 250µs Pulse Test
25℃
V
SD, Source-Drain voltage [V]
10
-1
10
0
10
1
0
500
1000
1500
2000
2500
3000
3500
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = Cds + Cgd
C
rss = Cgd
Notes ;
※
1. V
GS = 0 V
2. f =1MHz
C
rss
C
oss
C
iss
V
DS, Drain-Source Voltage [V]
0
10
20304050
0
2
4
6
8
10
12
V
DS = 300V
V
DS = 120V
V
DS = 480V
Note : I
※
D = 12A
Q
G, Total Gate Charge [nC]
SW
SW12
12N6
N6 5
5
SAMWIN



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