SW12N65 datasheet(2/7 Pages) SEMIPOWER

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Electrical characteristic ( T

C = 25

oC unless otherwise specified )

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Off characteristics

BVDSS

Drain to source breakdown voltage

VGS=0V, ID=250uA

650

ΔBV

DSS

/ ΔTJ

Breakdown voltage temperature

coefficient

ID=250uA, referenced to 25

0.63

V/oC

IDSS

Drain to source leakage current

VDS=650V, VGS=0V

VDS=520V, TC=125

GSS

Gate to source leakage current, forward

VGS=30V, VDS=0V

100

VGS=-30V, VDS=0V

-100

Gate to source leakage current, reverse

On characteristics

VGS(TH)

Gate threshold voltage

VDS=VGS, ID=250uA

2.0

4.0

RDS(ON)

Drain to source on state resistance

VGS=10V, ID = 6A

0.7

0.8

Ω

Dynamic characteristics

Ciss

Input capacitance

VGS=0V, VDS=25V, f=1MHz

1950

2530

Coss

Output capacitance

156

205

Crss

Reverse transfer capacitance

td(on)

Turn on delay time

VDS=325V, ID=12A, RG=25Ω

Rising time

180

td(off)

Turn off delay time

148

300

Fall time

160

Total gate charge

VDS=520V, VGS=10V, ID=12A

Qgs

Gate-source charge

Qgd

Gate-drain charge

Source to drain diode ratings characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Continuous source current

Integral reverse p-n Junction

diode in the MOSFET

ISM

Pulsed source current

VSD

Diode forward voltage drop.

IS=12A, VGS=0V

1.5

Trr

Reverse recovery time

IS=12A, VGS=0V,

dIF/dt=100A/us

400

Qrr

Breakdown voltage temperature

4.8

※. Notes

Repeatitive rating : pulse width limited by junction temperature.

L = 13mH, I

AS = 12.0A, VDD = 50V, RG=50Ω, Starting TJ = 25

SD ≤ 12.0A, di/dt = 300A/us, VDD ≤ BVDSS, Staring TJ =25

Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%

Essentially independent of operating temperature.

SW12

12N6

N6 5

SAMWIN

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