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2SC3307 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3307 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3307 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 800 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 900 V VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A 1.0 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1A 1.5 V ICBO Collector cut-off current VCB=800V ;IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 1 mA hFE-1 DC current gain IC=10mA ; VCE=5V 10 hFE-2 DC current gain IC=5A ; VCE=5V 10 Switching times tr Rise time 1.0 μs tstg Storage time 3.0 μs tf Fall time IC=1A ; VCC≈400V IB1=-IB2=0.4A 1.0 μs |
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