2SC3307 datasheet(1/4 Pages) ISC

部件名	2SC3307

功能描述	Silicon NPN Power Transistors

PDF	4 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC3307

DESCRIPTION

・With TO-3PL package

・Excellent switching times

: tr=1.0μs(Max .),tf=1.0μs(Max .)(IC=5A)

・High collector breakdown voltage : VCEO=800V

APPLICATIONS

・High speed,high voltage switching applications

・Switching regulator applications

・High speed DC-DC converter applications

PINNING

DESCRIPTION

1

Base

2

Collector;connected to

mounting base

3

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

900

V

VCEO

Collector-emitter voltage

Open base

800

V

VEBO

Emitter-base voltage

Open collector

7

V

IC

Collector current

10

A

ICM

Collector current-peak

15

A

IB

Base current

3

A

PC

Collector power dissipation

TC=25℃

150

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~150

℃

Fig.1 simplified outline (TO-3PL) and symbol

类似零件编号 - 2SC3307

制造商	部件名	数据表	功能描述
Toshiba Semiconductor	2SC3307	200Kb / 3P	NPN TRIPLE DIFFUSED TYPE (HIGH SPEED AND HIGH VOLTAGE SWITCHING, SWITCHING REGULATOR, HIGH SPEED DC-DC CONVERTER APPLICATIONS)
Toshiba Semiconductor	2SC3307	171Kb / 5P	Silicon NPN Triple Diffused Type High-Speed and High-Voltage Switching Applications
Savantic, Inc.	2SC3307	238Kb / 4P	Silicon NPN Power Transistors
Savantic, Inc.	2SC3307	239Kb / 4P	Silicon NPN Power Transistors
Toshiba Semiconductor	2SC3307	1Mb / 73P	Bipolar Small-Signal Transistors

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