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BD643 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BD643 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Dalington Power Transistors BD643 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=0.1A, IB=0 45 V V(BR)CBO Collector-base breakdown voltage IC=5mA, IE=0 45 V V(BR)EBO Emitter-base breakdown voltage IE=2mA, IC=0 5 V VCEsat Collector-emitter saturation voltage IC=3A ,IB=12mA 2.0 V VBE Base-emitter voltage IC=3A , VCE=3V 2.5 V ICBO Collector cut-off current VCB=VCBMax; IE=02 0.2 mA ICEO Collector cut-off current VCE=1/2 VCEMax; IB=0 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 5 mA hFE-1 DC current gain IC=0.5A ; VCE=3V 1500 hFE-2 DC current gain IC=3A ; VCE=3V 750 hFE-3 DC current gain IC=6A ; VCE=3V 750 VF Diode forward voltage IF=3A 1.8 V fT Transition frequency IC=3A;VCE=3V;f=1MHz 7 MHz |
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