BD643 datasheet(1/3 Pages) ISC

部件名	BD643

功能描述	Silicon NPN Dalington Power Transistors

PDF	3 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

标志

1 / 3 page

Inchange Semiconductor

Product Specification

Silicon NPN Dalington Power Transistors

BD643

DESCRIPTION

・With TO-220C package

・Complement to type BD644

・DARLINGTON

APPLICATIONS

・For use in output stages in audio

equipment ,general amplifier,and

analogue switching applications

PINNING

DESCRIPTION

1

Base

2

Collector;connected to

mounting base

3

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

45

V

VCEO

Collector-emitter voltage

Open base

45

V

VEBO

Emitter-base voltage

Open collector

5

V

IC

Collector current-DC

8

A

ICM

Collector current-Pulse

12

A

IB

Base current

150

A

PC

Collector power dissipation

TC=25℃

62.5

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal resistance junction to case

1.5

℃/W

类似零件编号 - BD643

制造商	部件名	数据表	功能描述
Siemens Semiconductor G...	BD643	125Kb / 4P	NPN SILICON DARLINGTON TRANSISTORS
Siemens Semiconductor G...	BD643	127Kb / 4P	PNP SILICON DARLINGTON TRANSISTORS
Savantic, Inc.	BD643	92Kb / 3P	Silicon NPN Dalington Power Transistors
Comset Semiconductor	BD643	336Kb / 5P	SILICON DARLINGTON POWER TRANSISTORS
Comset Semiconductor	BD643	112Kb / 5P	SILICON DARLINGTON POWER TRANSISTORS

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类似说明 - BD643

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