BD680A datasheet(2/3 Pages) ISC

部件名	BD680A

功能描述	Silicon PNP Power Transistors

PDF	3 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

标志

2 / 3 page

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

BD676A/678A/680A/682

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

BD676A

-45

BD678A

-60

BD680A

-80

V(BR)CEO

Collector-emitter

breakdown voltage

BD682

IC=-50mA; IB=0

-100

BD676A/678A/680A

IC=-2A; IB=-40mA

-2.8

VCEsat

Collector-emitter

saturation voltage

BD682

IC=-1.5A; IB=-30mA

-2.5

BD676A/678A/680A

IC=-2A ; VCE=-3V

VBE(on)

Emitter-base

voltage

BD682

IC=-1.5A ; VCE=-3V

-2.5

ICBO

Collector

cut-off current

VCB=rated BVCEO; IE=0

Ta=100 ℃

-0.2

-2.0

ICEO

Collector

cut-off current

VCE=1/2rated BVCEO; IB=0

-0.5

IEBO

Emitter cut-off current

VEB=-5V; IC=0

-2.0

BD676A/678A/680A

IC=-2A ; VCE=-3V

750

hFE

DC current gain

BD682

IC=-1.5A ; VCE=-3V

750

BD680A 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

BD680A 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

Html Pages

1 2 3

数据表下载

链接网址

BD680A 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

BD680A 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

Html Pages

1 2 3

数据表 下载

链接网址

数据表下载