BD680A datasheet(1/3 Pages) ISC

部件名	BD680A

功能描述	Silicon PNP Power Transistors

PDF	3 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

标志

1 / 3 page

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

BD676A/678A/680A/682

DESCRIPTION

・

・With TO-126 package

・Complement to type BD675A/677A/679A/681

・DARLINGTON

・High DC current gain

APPLICATIONS

・For medium power linear and

switching applications

PINNING

DESCRIPTION

1

Emitter

2

Collector;connected to

mounting base

3

Base

Absolute maximum ratings (Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

BD676A

-45

BD678A

-60

BD680A

-80

VCBO

Collector-base voltage

BD682

Open emitter

-100

V

BD676A

-45

BD678A

-60

BD680A

-80

VCEO

Collector-emitter voltage

BD682

Open base

-100

V

VEBO

Emitter -base voltage

Open collector

-5

V

IC

Collector current

-4

A

ICM

Collector current-Peak

-6

A

IB

Base current

-0.1

A

PC

Collector power dissipation

TC=25℃

40

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

类似零件编号 - BD680A

制造商	部件名	数据表	功能描述
Motorola, Inc	BD680A	110Kb / 4P	Plastic Medium-Power Silicon PNP Darlingtons
STMicroelectronics	BD680A	87Kb / 6P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Sep-1997
Fairchild Semiconductor	BD680A	42Kb / 4P	Medium Power Linear and Switching Applications
STMicroelectronics	BD680A	252Kb / 6P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Nov-2003
ON Semiconductor	BD680A	59Kb / 4P	Plastic Medium?뭁ower Silicon PNP Darlingtons October, 2005 ??Rev. 12

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