BDT62 datasheet(1/2 Pages) ISC

部件名	BDT62

功能描述	isc Silicon PNP Darlington Power Transistors

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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1 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistors

BDT62/A/B/C

DESCRIPTION

·DC Current Gain -hFE = 1000(Min)@ IC= -3A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = -60V(Min)- BDT62; -80V(Min)- BDT62A;

-100V(Min)- BDT62B; -120V(Min)- BDT62C

·Complement to Type BDT63/A/B/C

APPLICATIONS

·Designed for use in audio amplifier output stages , general

purpose amplifier and high speed switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BDT62

-60

BDT62A

-80

BDT62B

-100

VCBO

Collector-Base

Voltage

BDT62C

-120

V

BDT62

-60

BDT62A

-80

BDT62B

-100

VCEO

Collector-Emitter

Voltage

BDT62C

-120

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-10

A

ICM

Collector Current-Peak

-15

A

IB

B

Base Current

-0.25

A

PC

Collector Power Dissipation

TC=25℃

90

W

Tj

Junction Temperature

150

℃

Tstg

Storage Ttemperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.39

℃/W

Rth j-c

Thermal Resistance,Junction to Ambient

70

℃/W

isc Website：www.iscsemi.cn

类似零件编号 - BDT62

制造商	部件名	数据表	功能描述
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