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PMD1601K 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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PMD1601K 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD1601K ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA; IB= 0 60 V V(BR)CER Collector-Emitter Breakdown Voltage IC= 100mA; RBE= 2.2kΩ 60 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 40mA 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 40mA 2.8 V VBE(on) Base-Emitter On Voltage IC= 10A; VCE= 3V 2.8 V ICER Collector Cutoff current VCE= 60V; RBE=2.2KΩ 7.0 mA IEBO Emitter Cut-off current VEB= 5V; IC= 0 3.0 mA hFE DC Current Gain IC= 10A; VCE= 3V 750 20000 fT Current-Gain—Bandwidth Product IC= 7A; VCE= 3V, f= 1kHz 4 MHz COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz 400 pF isc Website:www.iscsemi.cn 2 |
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