PMD1601K datasheet(1/2 Pages) ISC

部件名	PMD1601K

功能描述	isc Silicon NPN Darlingtion Power Transistor

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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1 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlingtion Power Transistor

PMD1601K

DESCRIPTION

·High DC current gain

·Collector-Emitter Breakdown Voltage-

V(BR)CEO= 60V(Min)

·Complement to type PMD1701K

APPLICATIONS

·Designed for general purpose amplifier and low frequency

switching applications

ABSOLUTE MAXIMUM RATINGS(TC=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

60

V

VCEO

Collector-Emitter Voltage

60

V

VEBO

Emitter-Base Voltage

5.0

V

IC

Collector Current -Continuous

20

A

ICP

Collector Current-Peak

40

A

IB

B

Base Current

0.5

A

PC

Collector Power Dissipation@TC=25℃

180

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

ThermalResistance, Junction to Case

0.97

℃/W

isc Website：www.iscsemi.cn

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