MBRF10100CT datasheet(2/5 Pages) VISHAY

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Document Number: 89321

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Revision: 22-Sep-10

MBRF1090CT, MBRF10100CT

Vishay General Semiconductor

New Product

Notes

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width

≤ 40 ms

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

Fig. 1 - Forward Current Derating Curve

Fig. 2 - Maximum Non-Repetititve Peak Forward Surge

Current Per Diode

ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

VALUE

UNIT

Maximum instantaneous forward voltage per diode

IF = 5.0 A

TC = 25 °C

VF (1)

0.75

TC = 125 °C

0.85

Maximum reverse current per diode

at working peak reverse voltage

TJ = 25 °C

IR (2)

100

μA

TJ = 100 °C

6.0

THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

MBRF1090CT

MBRF10100CT

UNIT

Typical thermal resistance per diode

RθJC

6.8

°C/W

ORDERING INFORMATION (Example)

PACKAGE

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

ITO-220AB

MBRF10100CT-M3/4W

1.75

50/tube

Tube

050

100

125

150

175

Case Temperature (°C)

Resistive or Inductive Load

Mounted on Specific Heatsink

100

120

100

J = TJ Max.

8.3 ms Single Half Sine-Wave

Number of Cycles at 60 Hz

MBRF10100CT 数据表(PDF) 2 Page - Vishay Siliconix

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