Document Number: 89321

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Revision: 22-Sep-10

3

MBRF1090CT, MBRF10100CT

Vishay General Semiconductor

New Product

Fig. 3 - Forward Power Loss Characteristics Per Diode

Fig. 4 - Typical Instantaneous Forward Characteristics Per Diode

Fig. 5 - Typical Reverse Characteristics Per Diode

Fig. 6 - Typical Junction Capacitanc Per Diode

Fig. 7 - Typical Transient Thermal Impedance Per Diode

01

56

2

4.0

3.5

3.0

2.5

1.0

0.5

0

2.0

1.5

34

Average Forward Current (A)

D = t

t

p

T

D = 0.1

D = 0.2

D = 0.3

D = 0.8

D = 0.5

D = 1.0

0

0.2

1.6

0.4

100

10

0.1

1

0.6

0.8

1.0

1.2

1.4

Instantaneous Forward Voltage (V)

T

T

T

T

0.01

0.001

0.1

1

10

100

0.0001

20

30

10

100

40

50

70

90

60

80

Percent of Rated Peak Reverse Voltage (%)

T

T

T

T

10

1

100

100

1000

10 000

0.1

10

Reverse Voltage (V)

T

f = 1 MHz

V

0.01

10

100

1

10

1

0.1

t - Pulse Duration (s)

Junction to Case