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Document Number: 94393

6

Revision: 17-Aug-10

ST110SPbF Series

Vishay Semiconductors

Phase Control Thyristors

(Stud Version), 110 A

Fig. 9 - Gate Characteristics

0.001

0.01

0.1

1

0.001

0.01

0.1

1

10

Square Wave Pulse Duration (s)

ST110S Series

Steady State Value

R

= 0.195 K/W

(DC Operation)

thJC

0.1

1

10

100

0.001

0.01

0.1

1

10

100

VGD

IGD

(b)

(a)

(1)

(2)

(3)

Instantaneous Gate Current (A)

a) Recommended load line for

b) Recommended load line for

<=30% rated di/dt : 10V, 10ohms

Frequency Limited by PG(AV)

rated di/dt : 20V, 10ohms; tr<=1 µs

tr<=1 µs

(1) PGM = 10W, tp = 4ms

(2) PGM = 20W, tp = 2ms

(3) PGM = 40W, tp = 1ms

(4) PGM = 60W, tp = 0.66ms

Device: ST110S Series

Rectangular gate pulse

(4)