Document Number: 94393

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Revision: 17-Aug-10

3

ST110SPbF Series

Phase Control Thyristors

(Stud Version), 110 A

Vishay Semiconductors

TRIGGERING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

TYP.

MAX.

Maximum peak gate power

5

W

Maximum average gate power

1

Maximum peak positive gate current

2.0

A

Maximum peak positive gate voltage

20

V

Maximum peak negative gate voltage

5.0

DC gate current required to trigger

Maximum required gate trigger/

current/voltage are the lowest

value which will trigger all units

6 V anode to cathode applied

180

-

mA

90

150

40

-

DC gate voltage required to trigger

2.9

-

V

1.8

3.0

1.2

-

DC gate current not to trigger

Maximum gate current/voltage

not to trigger is the maximum

value which will not trigger any

cathode applied

10

mA

DC gate voltage not to trigger

0.25

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum operating junction

temperature range

- 40 to 125

°C

Maximum storage temperature range

- 40 to 150

Maximum thermal resistance,

junction to case

DC operation

0.195

K/W

Maximum thermal resistance,

case to heatsink

Mounting surface, smooth, flat and greased

0.08

Mounting torque, ± 10 %

Non-lubricated threads

15.5 (137)

Nm

(lbf · in)

Lubricated threads

14 (120)

Approximate weight

130

g

Case style

See dimensions - link at the end of datasheet

TO-209AC (TO-94)