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EPC310 数据表(PDF) 2 Page - Espros Photonics corp

部件名 EPC310
功能描述  High sensitive photodiodes
PDF  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  EPC [Espros Photonics corp]
网页  http://www.espros.ch
标志 EPC - Espros Photonics corp

EPC310 数据表(HTML) 2 Page - Espros Photonics corp

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epc3xx
Absolute Maximum Ratings (Notes 1, 2)
Recommended Operating Conditions
Reverse Voltage VR
Breakdown Voltage between Diodes
Storage Temperature Range (TS)
Lead Temperature solder, 4 sec. (TL)
30.0 V
10.0 V
-40°C to +85°C
+260°C
Reverse Voltage (VR)
Operating Temperature (TA)
Relative Humidity (non-condensing)
Min.
1.5
-40
+5
Max.
20.0
+85
+95
Units
V
°C
%
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended operating conditions
indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed specific-
ations and test conditions, see Electrical Characteristics.
Note 2: This device is a highly sensitive CMOS photodiodes with an ESD rating of JEDEC HBM class 2 (<2kV). Handling and assembly of
this device should only be done at ESD protected workstations.
Note 3: Unless otherwise stated, measuring parameters are V R = 5.0 V, -40°C < TA < +85°C, RL = 50 Ω
Note 4: Unless otherwise stated, measurement data apply for individual photo diodes in multi diode chips
General Characteristics (Notes 3, 4)
Symbol
Parameter
Conditions/Comments
Values
Units
Min.
Typ.
Max.
λS max.
Wavelength
max. Sensitivity
850
nm
λ
Wavelength Range
S = 20 % of Smax
400
1030
nm
Sλ
Spectral Sensitivity
λ = 850nm, VR = 5V, Ie = 1 mW/cm2, type epc300
0.6
A/W
η
Quantum Efficiency
λ = 850nm, VR = 5V, Ie = 1 mW/cm2, type epc300
90
%
φ
Half angle
±60
°
VO
Open Circuit Voltage
Ie = 0.5 mW/cm2
300
mV
TCV
Temperature Coefficient of ISC
0.38
%/K
TCO
Temperature Coefficient of VO
-3.0
mV/K
Type Specific Characteristics @ +25°C (all diodes of the array connected in parallel)
Symbol
Parameter
Conditions/Comments
Values
Units
Min.
Typ.
Max.
IP
Photo Current
per diode VR = 5V, Ie = 1 mW/cm2,
λ = 850 nm (NIR filter centered on 850nm)
2.5
μA
epc300
5
epc310
10
epc320
20
epc330
40
IR
Dark Current
*
per diode VR = 5 V, TA= 20°C
20
250
pA
epc300
40
500
epc310
80
1000
epc320
160
2000
epc330
320
4000
ISC
Short-circuit Current
per diode Ie = 1 mW/cm2
2.5
μA
epc300
5
epc310
10
epc320
20
epc330
40
* selected types available upon request
© 2011 ESPROS Photonics Corporation
Characteristics subject to change without notice
2
Datasheet epc3xx - V2.3
www.espros.ch



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