epc3xx

High sensitive photodiodes

General Description

The epc3xx family products are high-sensitive photo diodes for

light-barrier, light-curtain, and the like applications. These photo

diodes are designed to be used in a reverse-bias mode.

This device allows the design of short to long range light barriers

from a few millimeters up to tens of meters.

Using chips from the epc3xx product line, linear or two dimen-

sional arrays can be formed for any application, be it triangulation,

spot location, angle measurement, rotary encoders, or similar.

Also, spectral sensitive detectors can easily be designed by

applying color filters in front of the photo diodes.

Also, other mechanical dimensions are available upon request. It

is be possible to manufacture photo diodes of up to 15x15 mm or

even bigger. Such a 15x15 mm device then would contain 450

individual photo diodes, each of them individually accessible. All

diodes feature a very high quantum efficiency of 90% in the near

IR range, a reverse breakdown voltage of up to 30 Volts and a

response time down to less than 100ns. All devices are available

upon request with optical bandpass filters.

Features



Low dark current



High quantum efficiency



High dynamic range



Diodes can be used in parallel



CSP package with very small footprint



Near infrared and visible version available



Customer specific wavelength filter upon request

Applications



Light barriers ranging from millimeters to tens of meters



Light curtains



Smoke detectors



Liquid detectors



Heart beat monitors



Position detection (rotary, linear, angle, etc.)



IR remote control of Hi-Fi, TV sets and other equipment



Leveling instruments



Differential measurement



Linear photo diode arrays

Product Range Overview

© 2010 ESPROS Photonics AG

www.espros.ch

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© 2010 ESPROS Photonics AG

www.espros.ch

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© 2010 ESPROS Photonics AG

www.espros.ch

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© 2010 ESPROS Photonics AG

www.espros.ch

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R : refer to chapter “Electrical isolation between individual diodes”

Model

No. of

Photo

Diodes

Diode

Length

(mm)

Diode

Width

(mm)

Total Active

Area

Typ. Dark

Current

at 20°C (pA )

Ideal Bias

Voltage

(V)

Wavelength

(nm)

Footprint

Single diode

1

1.0

0.5

0.43

20

5

400 - 1050

---

epc300

2

1.0

1.0

0.86

40

5

400 - 1050

CSP4

epc310

4

2.0

1.0

1.71

80

5

400 - 1050

CSP8

epc320

8

2.0

2.0

3.42

160

5

400 - 1050

CSP16

epc330

16

4.0

2.0

6.84

320

5

400 - 1050

CSP32

Type specific characteristics (all diodes of the array connected in parallel)

© 2011 ESPROS Photonics Corporation

Characteristics subject to change without notice

1

Datasheet epc3xx - V2.3

www.espros.ch