Elektronische Bauelemente

SST3585

N And P-Channel Enhancement Mode Power MOSFET

03-Jan-2012 Rev. G

Page 2 of 7

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

N-Ch

20

-

-

Drain-Source Breakdown

Voltage

P-Ch

-20

-

-

V

N-Ch

-

0.02

-

Reference to 25°C, ID=1mA

Breakdown Voltage Temp.

Coefficient

P-Ch

△

-

-0.01

-

V/°C

Reference to 25°C, ID= -1mA

N-Ch

0.5

-

1.2

Gate-Threshold Voltage

P-Ch

-

-

-1.2

V

N-Ch

-

7

-

Forward Transconductance

P-Ch

-

4

-

S

N-Ch

-

-

±100

Gate-Source Leakage Current

P-Ch

-

-

nA

N-Ch

-

-

1

P-Ch

-

-

-1

N-Ch

-

-

10

Drain-Source Leakage Current

P-Ch

-

-

-25

μA

N-Ch

-

-

75

P-Ch

-

-

160

N-Ch

-

-

125

Drain-Source On-Resistance

1

P-Ch

-

-

300

mΩ

N-Ch

-

4

7

Total Gate Charge

1

P-Ch

-

5

8

N-Ch

-

0.7

-

Gate-Source Charge

P-Ch

-

1

-

N-Ch

-

2

-

Gate-Drain Charge

P-Ch

-

2

-

nC

N-Channel

P-Channel

N-Ch

-

6

-

Turn-on Delay Time

1

P-Ch

-

6

-

N-Ch

-

8

-

Rise Time

P-Ch

-

17

-

N-Ch

-

10

-

Turn-off Delay Time

P-Ch

-

16

-

N-Ch

-

3

-

Fall Time

P-Ch

-

5

-

nS

N-Channel

P-Channel

N-Ch

-

430

520

Input Capacitance

P-Ch

-

630

750

N-Ch

-

55

-

Output Capacitance

P-Ch

-

50

-

N-Ch

-

40

-

Reverse Transfer Capacitance

P-Ch

-

40

-

pF

N-Channel

P-Channel

N-Ch

-

1.4

1.7

Gate Resistance

P-Ch

-

7

10

Ω

f=1.0MHz