Elektronische Bauelemente

SST3585

N And P-Channel Enhancement Mode Power MOSFET

03-Jan-2012 Rev. G

Page 3 of 7

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Source-Drain Diode

N-Ch

-

-

1.2

Forward On Voltage

1

P-Ch

-

-

-1.2

V

N-Ch

-

16

-

Reverse Recovery Time

P-Ch

-

20

-

ns

N-Ch

-

8

-

Reverse Recovery Charge

P-Ch

-

15

-

nC

Notes:

1

Pulse width limited by Max. junction temperature.

2

Pulse width≦300μs, duty cycle≦2%.

3

Surface mounted on 1 in