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Document Number 85726

Rev. 1.5, 26-Nov-10

BAV19WS-V, BAV20WS-V, BAV21WS-

Vishay Semiconductors

For technical questions within your region, please contact one of the following:

Absolute Maximum Ratings

Note

Thermal Characteristics

Note

Electrical Characteristics

Parameter

Test condition

Part

Symbol

Value

Unit

Continuous reverse voltage

BAV19WS-V

100

V

BAV20WS-V

150

V

BAV21WS-V

200

V

Repetitive peak reverse voltage

BAV19WS-V

120

V

BAV20WS-V

200

V

BAV21WS-V

250

V

Forward continuous current

mA

Rectified current (average) half

wave rectification with resist.

load

mA

Repetitive peak forward current

f

≥ 50 Hz, θ = 180°

mA

Surge forward current

1A

Power dissipation

mW

Parameter

Test condition

Symbol

Value

Unit

Thermal resistance junction to

ambient air

K/W

Junction temperature

°C

Storage temperature range

°C

Parameter

Test condition

Part

Symbol

Min.

Typ.

Max.

Unit

Forward voltage

1V

1.25

V

Leakage current

BAV19WS-V

100

nA

BAV19WS-V

15

µA

BAV20WS-V

100

nA

BAV20WS-V

15

µA

BAV21WS-V

100

nA

BAV21WS-V

15

µA

Dynamic forward resistance

5

Ω

Diode capacitance

1.5

pF

Reverse recovery time

50

ns