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BAV20WS-V 数据表(PDF) 3 Page - Vishay Siliconix |
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BAV20WS-V 数据表(HTML) 3 Page - Vishay Siliconix |
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3 / 5 page ![]() BAV19WS-V, BAV20WS-V, BAV21WS- Document Number 85726 Rev. 1.5, 26-Nov-10 Vishay Semiconductors www.vishay.com 3 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Typical Characteristics Tamb = 25 °C, unless otherwise specified Figure 1. Forward Current vs. Forward Voltage Figure 2. Admissible Forward Current vs. Ambient Temperature Figure 3. Admissible Power Dissipation vs. Ambient Temperature 18858 1000 100 10 1 0.1 0.01 0 0.4 0.6 0.8 1 0.2 VF - Forward Voltage (V) Tj = 100 °C 25 °C 0.1 0.2 0.3 0 0 30 60 90 120 150 18859 Tamb - Ambient Temperature (°C) I Current (rectif.) O DC current IF 200 18864 Tamb - Ambient Temperature (°C) 250 200 150 100 50 20 40 60 80 100 120 140 160 180 0 0 Figure 4. Dynamic Forward Resistance vs. Forward Current Figure 5. Leakage Current vs. Junction Temperature Figure 6. Capacitance vs. Reverse Voltage 10 100 1 1 100 10 18861 IF - Forward Current (mA) 0.1 18862 1 10 100 1000 040 80 120 160 200 Tj - Junction Temperature (°C) Reverse Voltage BAV19WS-V VR = 100 V BAV20WS-V VR = 150 V BAV21WS-V VR = 200 V 18863 110 0.1 0.8 0.6 0.4 1.4 1.2 1.0 0.2 0 100 VR - Reverse Voltage (V) 2.0 1.8 1.6 =25 °C Tj |
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