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20UT04FNTR 数据表(PDF) 1 Page - Vishay Siliconix

部件名 20UT04FNTR
功能描述  High Performance Schottky Generation 5.0, 20 A
PDF  8 Pages
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

20UT04FNTR 数据表(HTML) 1 Page - Vishay Siliconix

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VS-20UT04, VS-20WT04FN
www.vishay.com
Vishay Semiconductors
Revision: 03-Nov-11
1
Document Number: 94573
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Generation 5.0, 20 A
Note
•VF measured at 125 °C, connecting 2 anode pins
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized VF vs. IR trade off for high efficiency
• Increased ruggedness for reverse avalanche
capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Specific for PV cells bypass diode
• High efficiency SMPS
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• DC/DC systems
• Increased power density systems
PRODUCT SUMMARY
Package
D-PAK (TO-252AA),
I-PAK (TO-251AA)
IF(AV)
20 A
VR
45 V
VF at IF
0.53 V
IRM max.
7 mA at 125 °C
TJ max.
175 °C
Diode variation
Single die
EAS
108 mJ
I-PAK (TO-251AA)
D-PAK (TO-252AA)
VS-20UT04
VS-20WT04FN
Base
cathode
Anode
Anode
4, 2
3
1
Base
cathode
Anode
Anode
4, 2
3
1
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
UNITS
VRRM
45
V
VF
20 Apk, TJ = 125 °C
(typical, measured connecting 2 anode pins)
0.480
V
TJ
Range
- 55 to 175
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VS-20UT04
VS-20WT04FN
UNITS
Maximum DC reverse voltage
VR
TJ = 25 °C
45
V


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