VS-20UT04, VS-20WT04FN

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Vishay Semiconductors

Revision: 03-Nov-11

2

Document Number: 94573

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Note

Notes

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current

20

A

Maximum peak one cycle

non-repetitive surge current

5 μs sine or 3 μs rect. pulse

Following any rated load

condition and with rated

900

A

10 ms sine or 6 ms rect. pulse

220

Non-repetitive avalanche energy

108

mJ

Repetitive avalanche current

Limited by frequency of operation and time pulse duration

A

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

TYP.

MAX.

UNITS

Forward voltage drop

10 A

0.505

0.540

V

20 A

0.570

0.610

10 A

0.415

0450

20 A

0.520

0.580

Reverse leakage current

-

100

μA

-

7

mA

Junction capacitance

1900

-

pF

Series inductance

Measured lead to lead 5 mm from package body

-

-

nH

Maximum voltage rate of change

dV/dt

-

10 000

V/μs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and

storage temperature range

- 55 to 175

°C

Maximum thermal resistance,

junction to case

DC operation

1.2

°C/W

Typical thermal resistance,

case to heatsink

0.3

Approximate weight

2g

0.07

oz.

Marking device

Case style I-PAK

20UT04

Case style D-PAK

20WT04FN