WFP830

WFP830

WFP830

WFP830

2/7

Steady,

Steady,

Steady,

Steady, keep

keep

keep

keep you

you

you

you advance

advance

advance

advance

Electrical

Electrical

Electrical

Electrical Characte

Characte

Characte

Characterrrristics

istics

istics

istics (Tc

(Tc

(Tc

(Tc =

=

=

= 25

25

25

25°°°°C)

C)

C)

C)

Characteristics

Symbol

Test Condition

Min

Type

Max

Unit

Gate leakage current

-

-

±100

nA

Gate−source breakdown voltage

±30

-

-

V

Drain cut−off current

-

-

1

μA

Drain−source breakdown voltage

500

-

-

V

Break Voltage Temperature

Coefficient

-

0.55

-

Gate threshold voltage

2

-

4

V

Drain−source ON resistance

-

1.16

1.5

Ω

Forward Transconductance

gfs

-

4.2

S

Input capacitance

f = 1 MHz

-

800

1050

pF

Reverse transfer capacitance

-

18

23

Output capacitance

-

76

100

Switching time

Rise time

(Note4,5)

-

15

40

ns

Turn−on time

-

40

90

Fall time

-

85

180

Turn−off time

-

45

100

Total gate charge (gate−source

plus gate−drain)

(Note4,5)

-

32

44

nC

Gate−source charge

-

3.7

-

Gate−drain (“miller”) Charge

-

15

-

Source

Source

Source

Source−

−

−

−Drain

Drain

Drain

Drain Ratings

Ratings

Ratings

Ratings and

and

and

and Characte

Characte

Characte

Characterrrristics

istics

istics

istics (Ta

(Ta

(Ta

(Ta =

=

=

= 2

2

2

25

5

5

5°°°°C)

C)

C)

C)

Characteristics

Symbol

Test Condition

Min

Type

Max

Unit

Continuous drain reverse current

-

-

-

4.5

A

Pulse drain reverse current

-

-

-

18

A

Forward voltage (diode)

-

-

1.4

V

Reverse recovery time

-

305

-

ns

Reverse recovery charge

-

2.6

-

μC

Note 1.Repeativity rating :pulse width limited by junction temperature

2.L=24mH,I

3.I

4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%

5.Essentially independent of operating temperature.

This transistor is an electrostatic sensitive device

Please handle with caution