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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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WFP830 数据表(PDF) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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WFP830 数据表(HTML) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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1 / 7 page  WFP830 WFP830 WFP830 WFP830 Symbol Parameter Value Units VDSS Drain Source Voltage 500 V ID Continuous Drain Current(@Tc=25℃) 4.5 A Continuous Drain Current(@Tc=100℃) 2.9 A IDM Drain Current Pulsed (Note1) 18 A VGS Gate to Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 300 mJ EAR Repetitive Avalanche Energy (Note 1) 7.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Total Power Dissipation(@Tc=25 ℃) 73 W Derating Factor above 25 ℃ 0.55 W/ ℃ TJ, Tstg Junction and Storage Temperature -55~150 ℃ TL Maximum lead Temperature for soldering purposes 300 ℃ Copyright@Winsemi Microelectronics Co.,Ltd.,All rights reserved. Rev, C Nov. 2008 T02-2 Silic Silic Silic Silico o o on n n n N-C N-C N-C N-Ch h h ha a a ann nn nn nnel el el el MOS MOS MOS MOSF F F FET ET ET ET Features Features Features Features ■ 4.5A,500V,RDS(on)(Max 1.5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 32nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General General General General Description Description Description Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast. Absolute Absolute Absolute Absolute Maximum Maximum Maximum Maximum Ratings Ratings Ratings Ratings Thermal Thermal Thermal Thermal Characteristics Characteristics Characteristics Characteristics G G G G D D D D S S S S T T T TO O O O220 220 220 220 Symbol Parameter Value Units Min Typ Max RQJC Thermal Resistance, Junction-to-Case - - 1.7 ℃/W RQCS Thermal Resistance, Case to Sink - 0.5 - ℃/W RQJA Thermal Resistance, Junction-to-Ambient - - 62.5 ℃/W |
类似零件编号 - WFP830 |
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类似说明 - WFP830 |
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