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SBP5027-R 数据表(PDF) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd

部件名 SBP5027-R
功能描述  High Voltage Fast-SwitchingNPN Power Transistor
PDF  5 Pages
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制造商  WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]
网页  http://www.winsemi.com
标志 WINSEMI - Shenzhen Winsemi Microelectronics Co., Ltd

SBP5027-R 数据表(HTML) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd

  SBP5027-R Datasheet HTML 1Page - Shenzhen Winsemi Microelectronics Co., Ltd SBP5027-R Datasheet HTML 2Page - Shenzhen Winsemi Microelectronics Co., Ltd SBP5027-R Datasheet HTML 3Page - Shenzhen Winsemi Microelectronics Co., Ltd SBP5027-R Datasheet HTML 4Page - Shenzhen Winsemi Microelectronics Co., Ltd SBP5027-R Datasheet HTML 5Page - Shenzhen Winsemi Microelectronics Co., Ltd  
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SBP5027
SBP5027
SBP5027
SBP5027----R
R
R
R
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
High
High
High
High Voltage
Voltage
Voltage
Voltage Fast-Switching
Fast-Switching
Fast-Switching
Fast-Switching NPN
NPN
NPN
NPN Power
Power
Power
Power Transistor
Transistor
Transistor
Transistor
Features
Features
Features
Features
◆ Very High Switching Speed
◆ High Voltage Capability
◆ Wide Reverse Bias SOA
General
General
General
General Description
Description
Description
Description
This Device is designed for high voltage, High speed
switching characteristics required such as lighting system,
switching mode power supply.
Absolute
Absolute
Absolute
Absolute Maximum
Maximum
Maximum
Maximum Ratings
Ratings
Ratings
Ratings
S
S
S
Sy
y
y
ymbol
mbol
mbol
mbol
Par
Par
Par
Para
a
a
amet
met
met
mete
e
e
errrr
T
T
T
Tes
es
es
estttt Condi
Condi
Condi
Condittttiiiio
o
o
ons
ns
ns
ns
V
V
V
Va
a
a
alue
lue
lue
lue
Units
Units
Units
Units
VCES
Collector-Emitter Voltage
VBE = 0
1100
V
VCEO
Collector-Emitter Voltage
IB = 0
800
V
VEBO
Emitter-Base Voltage
IC = 0
7.0
V
IC
Collector Current
3.0
A
ICP
Collector pulse Current
10
A
IB
Base Current
1.5
A
IBM
Base Peak Current
tP = 5ms
3.0
A
PC
Total Dissipation at Tc = 25℃
50
W
Total Dissipation at Ta = 25℃
2.08
TJ
Operation Junction Temperature
- 40 ~ 150
℃
TSTG
Storage Temperature
- 40 ~ 150
℃
Tc: Case temperature (good cooling)
Ta: Ambient temperature (without heat sink)
Thermal
Thermal
Thermal
Thermal Chara
Chara
Chara
Charac
c
c
cteri
teri
teri
teris
s
s
stics
tics
tics
tics
S
S
S
Sy
y
y
ymbol
mbol
mbol
mbol
Par
Par
Par
Para
a
a
amet
met
met
mete
e
e
errrr
V
V
V
Value
alue
alue
alue
Units
Units
Units
Units
RθJc
Thermal Resistance Junction to Case
1.67
℃/W
RθJA
Thermal Resistance Junction to Ambient
62.5
℃/W
Jan 2009. Rev. 0


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