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SBP5027-R 数据表(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd

部件名 SBP5027-R
功能描述  High Voltage Fast-SwitchingNPN Power Transistor
PDF  5 Pages
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制造商  WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]
网页  http://www.winsemi.com
标志 WINSEMI - Shenzhen Winsemi Microelectronics Co., Ltd

SBP5027-R 数据表(HTML) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd

  SBP5027-R Datasheet HTML 1Page - Shenzhen Winsemi Microelectronics Co., Ltd SBP5027-R Datasheet HTML 2Page - Shenzhen Winsemi Microelectronics Co., Ltd SBP5027-R Datasheet HTML 3Page - Shenzhen Winsemi Microelectronics Co., Ltd SBP5027-R Datasheet HTML 4Page - Shenzhen Winsemi Microelectronics Co., Ltd SBP5027-R Datasheet HTML 5Page - Shenzhen Winsemi Microelectronics Co., Ltd  
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SBP5027
SBP5027
SBP5027
SBP5027----R
R
R
R
2/5
.
Steady,
Steady,
Steady,
Steady, keep
keep
keep
keep you
you
you
you advance
advance
advance
advance
Electrical
Electrical
Electrical
Electrical Characteristics
Characteristics
Characteristics
Characteristics (T
C=25℃ unless otherwise noted)
S
S
S
Sy
y
y
ymbol
mbol
mbol
mbol
Par
Par
Par
Para
a
a
amet
met
met
mete
e
e
errrr
T
T
T
Tes
es
es
estttt Condi
Condi
Condi
Condittttiiiio
o
o
ons
ns
ns
ns
V
V
V
Va
a
a
alue
lue
lue
lue
Units
Units
Units
Units
Min
Min
Min
Min
T
T
T
Ty
y
y
yp
p
p
p
Max
Max
Max
Max
VCEO(sus)
Collector-Emitter Breakdown Voltage
Ic=5mA,Ib=0
800
-
-
V
VCE(sat)
Collector-Emitter Saturation Voltage
Ic=1.5A,Ib=0.3A
-
-
2
V
VBE(sat)
Base-Emitter Saturation Voltage
Ic=1.5A,Ib=0.3A
-
-
1.5
V
ICBO
Collector-Base Cutoff Current
Vcb=800V，Ie=0
-
-
10
μA
IEBO
Emitter -Base Cutoff Current
Veb=5V, Ic=0
-
-
10
μA
hFE
DC Current Gain
Vce=5V,Ic=0.2A
Vce=5V, Ic=1.0A
10
8
-
-
40
-
Cob
Output Capacitance
Vcb=10V,fT=1MHz
-
60
-
pF
ton
ts
tf
Turn on Time
Storage Time
Fall Time
VCC=400V
Ic=5IB1=-2.5 IB2=2A
RL=200Ω
-
-
-
-
0.5
3.0
0.3
㎲
Note:
Note:
Note:
Note:
Pulse Test : Pulse width 300, Duty cycle 2%



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