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BUZ310 数据表(PDF) 8 Page - Siemens Semiconductor Group |
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BUZ310 数据表(HTML) 8 Page - Siemens Semiconductor Group |
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8 / 9 page ![]() Semiconductor Group 8 07/96 BUZ 310 Typ. gate charge VGS = ƒ(QGate) parameter: I D puls = 4 A 0 10 20 30 40 50 nC 65 Q Gate 0 2 4 6 8 10 12 V 16 V GS DS max V 0,8 DS max V 0,2 Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) -60 -20 20 60 100 °C 160 T j 900 920 940 960 980 1000 1020 1040 1060 1080 1100 1120 1140 1160 V 1200 V (BR)DSS |
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