BUZ310 datasheet(3/9 Pages) SIEMENS

部件名	BUZ310

功能描述	SIPMOS Power Transistor (N channel Enhancement mode)

PDF	9 Pages

Scroll/Zoom	100%

制造商	SIEMENS [Siemens Semiconductor Group]

网页	http://www.siemens.com/

标志

3 / 9 page

Semiconductor Group

07/96

BUZ 310

Electrical Characteristics, at

Tj = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Dynamic Characteristics

Transconductance

VDS≥ 2 * ID * RDS(on)max, ID = 1.5 A

gfs

0.7

1.5

Input capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Ciss

1600

2100

Output capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Coss

120

Reverse transfer capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Crss

Turn-on delay time

VDD = 30 V, VGS = 10 V, ID = 2 A

RGS = 50 Ω

td(on)

Rise time

VDD = 30 V, VGS = 10 V, ID = 2 A

RGS = 50 Ω

Turn-off delay time

VDD = 30 V, VGS = 10 V, ID = 2 A

RGS = 50 Ω

td(off)

110

140

Fall time

VDD = 30 V, VGS = 10 V, ID = 2 A

RGS = 50 Ω

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