RJH60M2DPE datasheet(1/4 Pages) RENESAS

部件名	RJH60M2DPE

功能描述	600 V - 12 A - IGBT Application: Inverter

PDF	4 Pages

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制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

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R07DS0531EJ0100 Rev.1.00

Page 1 of 3

Aug 30, 2011

Preliminary Datasheet

RJH60M2DPE

600 V - 12 A - IGBT

Application: Inverter

Features

 Short circuit withstand time (8 s typ.)

 Low collector to emitter saturation voltage

VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)

 Built in fast recovery diode (100 ns typ.) in one package

 Trench gate and thin wafer technology

 High speed switching

tf = 80 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 12 A, Rg = 5 , Ta = 25°C, inductive load)

Outline

1. Gate

2. Collector

3. Emitter

4. Collector

RENESAS Package code: PRSS0004AE-B

(Package name: LDPAK (S)-(1) )

1

2

3

4

C

G

E

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to emitter voltage / diode reverse voltage

VCES / VR

600

V

Gate to emitter voltage

VGES

±30

V

Tc = 25°C

IC

25

A

Collector current

Tc = 100°C

IC

12

A

Collector peak current

ic(peak)

Note1

50

A

Collector to emitter diode forward current

iDF

12

A

Collector to emitter diode forward peak current

iD(peak)

Note1

50

A

Collector dissipation

PC

Note2

63

W

Junction to case thermal resistance (IGBT)

j-c Note2

1.98

°C/ W

Junction to case thermal resistance (Diode)

j-cd Note2

4.2

°C/ W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

 10 s, duty cycle  1%

2. Value at Tc = 25

C

R07DS0531EJ0100

Rev.1.00

Aug 30, 2011

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RJH60M2DPE 数据表(PDF) 1 Page - Renesas Technology Corp

RJH60M2DPE 数据表(HTML) 1 Page - Renesas Technology Corp

类似零件编号 - RJH60M2DPE

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RJH60M2DPE 数据表(PDF) 1 Page - Renesas Technology Corp

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类似零件编号 - RJH60M2DPE

类似说明 - RJH60M2DPE

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