RJH60M2DPE datasheet(2/4 Pages) RENESAS

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RJH60M2DPE

Preliminary

R07DS0531EJ0100 Rev.1.00

Page 2 of 3

Aug 30, 2011

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Zero gate voltage collector current

/ diode reverse current

ICES / IR

—

A

VCE = 600 V, VGE = 0

Gate to emitter leak current

IGES

—

±1

A

VGE = ±30 V, VCE = 0

Gate to emitter cutoff voltage

VGE(off)

—

VCE = 10 V, IC = 1 mA

VCE(sat)

—

1.9

2.5

IC = 12 A, VGE = 15 V

Note3

Collector to emitter saturation voltage

VCE(sat)

—

2.3

—

IC = 25 A, VGE = 15 V

Note3

Input capacitance

Cies

—

430

—

Output capacitance

Coes

—

Reverse transfer capacitance

Cres

—

VCE = 25 V

VGE = 0

f = 1 MHz

Total gate charge

—

Gate to emitter charge

Qge

—

Gate to collector charge

Qgc

—

VGE = 15 V

VCE = 300 V

IC = 12 A

td(on)

—

td(off)

—

Switching time

—

VCC = 300 V, VGE = 15 V

IC = 12 A

Rg = 5



Inductive load

Short circuit withstand time

tsc

—

s

Tc = 100

C

VCC  360 V, VGE = 15 V

FRD forward voltage

—

1.2

1.6

IF = 12 A

Note3

FRD reverse recovery time

trr

—

100

—

IF = 12 A

diF/dt = 100 A/s

Notes: 3. Pulse test.

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