MCM6341

4

MOTOROLA FAST SRAM

DC OPERATING CONDITIONS AND CHARACTERISTICS

(VDD = 3.3 V ± 10%, TA = 0 to + 70°C, Unless Otherwise Noted)

(TA = – 40 to + 85°C for Industrial Temperature Offering)

RECOMMENDED OPERATING CONDITIONS

Parameter

Symbol

Min

Typ

Max

Unit

Supply Voltage (Operating Voltage Range)

VDD

3.0

3.3

3.6

V

Input High Voltage

VIH

2.2

—

VDD + 0.3**

V

Input Low Voltage

VIL

– 0.5

*

—

0.8

V

*VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width ≤ 2.0 ns).

** VIH (max) = VDD + 0.3 V dc; VIH (max) = VDD + 2.0 V ac (pulse width ≤ 2.0 ns).

Parameter

Symbol

Min

Max

Unit

Input Leakage Current (All Inputs, Vin = 0 to VDD)

Ilkg(I)

—

± 1.0

µA

Output Leakage Current (E = VIH, Vout = 0 to VDD)

Ilkg(O)

—

± 1.0

µA

Output Low Voltage (IOL = + 8.0 mA)

VOL

—

0.4

V

Output High Voltage (IOH = – 4.0 mA)

VOH

2.4

—

V

NOTE: E1, E2, and E3 are represented by E in this data sheet. E2 is of opposite polarity to E1 and E3.

Parameter

Symbol

0 to 70

°C

– 40 to

+ 85

°C

Unit

AC Active Supply Current

MCM6341–10

(Iout = 0 mA, VDD = max)

MCM6341–11

MCM6341–12

MCM6341–15

IDD

280

275

270

260

290

285

280

270

mA

AC Standby Current (VDD = max, E = VIH,

MCM6341–10

No other restrictions on other inputs)

MCM6341–11

MCM6341–12

MCM6341–15

ISB1

50

50

50

45

55

55

55

50

mA

CMOS Standby Current (E

≥ VDD – 0.2 V, Vin ≤ VSS + 0.2 V or ≥ VDD – 0.2 V)

(VDD = max, f = 0 MHz)

ISB2

20

20

mA

NOTE: E1, E2, and E3 are represented by E in this data sheet. E2 is of opposite polarity to E1 and E3.

Parameter

Symbol

Typ

Max

Unit

Input Capacitance

All Inputs Except Clocks and DQs

E, G, W

Cin

Cck

4

5

6

8

pF

Input/Output Capacitance

DQ

CI/O

5

8

pF