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2SB1132L-X-AB3-R 数据表(PDF) 3 Page - Unisonic Technologies

部件名 2SB1132L-X-AB3-R
功能描述  MEDIUM POWER TRANSISTOR
PDF  5 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

2SB1132L-X-AB3-R 数据表(HTML) 3 Page - Unisonic Technologies

  2SB1132L-X-AB3-R Datasheet HTML 1Page - Unisonic Technologies 2SB1132L-X-AB3-R Datasheet HTML 2Page - Unisonic Technologies 2SB1132L-X-AB3-R Datasheet HTML 3Page - Unisonic Technologies 2SB1132L-X-AB3-R Datasheet HTML 4Page - Unisonic Technologies 2SB1132L-X-AB3-R Datasheet HTML 5Page - Unisonic Technologies  
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2SB1132
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
3 of 5
www.unisonic.com.tw
QW-R208-016.C
TYPICAL CHARACTERISTICS
0
-0.2
-500
-1
Base to Emitter Voltage, VBE(V)
Grounded Emitter Propagation
Characteristics
-200
-1
-2
-5 -10 -20
200
50
Collector Current, Ic(mA)
DC Current Gain vs. Collector Current ( )
100
-0.4 -0.6 -0.8
-1.6
-1.4
-1.2
-1.0
-2
-5
-10
VCE =-6V
TA=100
TA=25
TA= -55
0
-500
0
Collector to Emitter Voltage, VCE(V)
Grounded Emitter Output
Characteristics
-100
-0.4
-0.8
-1.6
-2.0
-1.2
-200
-300
-400
-2.0
IB =0mA
TA=25
-2.5
-1.5
-1.0
-0.5
-3.0
-3.5
-4.0
-4.5
-5.0
-50-100-200-500-1000
500
1000
TA=25
VCE= -3V
VCE= -1V
-1
-2
-5 -10 -20
200
50
Collector Current :Ic(mA)
DC Current Gain vs.Collector Current ( )
100
-50-100 -200-500-1000
500
1000
VCE= -3V
TA=100
TA=25
TA= -55
-1 -2
-5 -10 -20
-0.05
-0.01
Collector Current, Ic(mA)
Collector-emitter Saturation Voltage vs.
Collector Current
-0.02
-50-100-200-500-1000
-0.1
-0.2
-2000
-0.5
-1
TA=25
IC/IB=10
-1
-1.0
0
Base Current, IB(mA)
Collector Emitter Saturation Voltage vs.
Base Current
-0.2
-2
-5
-20
-50
-10
-0.4
-0.6
-0.8
-100
TA=25
IC = -500mA
IC = -300mA
-20
-50
-100



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