2SB1132L-X-AB3-R datasheet(4/5 Pages) UTC

部件名	2SB1132L-X-AB3-R

功能描述	MEDIUM POWER TRANSISTOR

PDF	5 Pages

Scroll/Zoom	100%

制造商	UTC [Unisonic Technologies]

网页	http://www.utc-ic.com

标志

4 / 5 page

2SB1132

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

4 of 5

www.unisonic.com.tw

QW-R208-016.C

TYPICAL CHARACTERISTICS(Cont.)

0 -0.2 -0.5 -1

-2

-0.05

-0.01

Collector to Emitter Voltage, VCE(V)

Safe Operation Area

-0.02

-5 -10 -20

-50

-0.1

-0.2

0.001 0.01

0.1

Time, t(s)

Transient Thermal Resistance

100

1000

-1

Emitter Current, IB(mA)

Gain Bandwidth Product

vs. Emitter Current

-2

-5

-20

-50

-10

100

200

-100

TA=25°C

VCE = -5V

-0.5

Collector to Base Voltage, VCB(V)

Collector Output Capacitance

vs.Collector-Base Voltage

-1

-2

-10

-20

-5

100

f=1MHz

TA=25°C

IE=0A

-0.5

-1

-2

-5

TA=25°C

*Single pulse

TA=25°C

Power Derating

1.6

0.6

150

100

1.4

1.2

0.8

Ambient Temperature, TA (

)

0.4

0.2

0.0

125

175

TO-252

SOT-89

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