UDN302L-AE3-R datasheet(1/4 Pages) UTC

部件名	UDN302L-AE3-R

功能描述	P-CHANNEL 2.5V SPECIFIED POWERTRENCH MOSFET

PDF	4 Pages

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制造商	UTC [Unisonic Technologies]

网页	http://www.utc-ic.com

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UNISONIC TECHNOLOGIES CO., LTD

UDN302

Power MOSFET

www.unisonic.com.tw

1 of 4

QW-R502-278.B

P-CHANNEL 2.5V SPECIFIED

POWERTRENCH MOSFET

DESCRIPTION

The UDN302 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with low gate

voltages. This device is suitable for use as a load switch or in PWM

applications.

FEATURES

* RDS(ON)=55mΩ @ VGS=-4.5V

* RDS(ON)=80mΩ @ VGS=-2.5V

* Low capacitance

* Low gate charge

* Fast switching capability

* Avalanche energy specified

SYMBOL

2.Gate

1.Source

3.Drain

ORDERING INFORMATION

Ordering Number

Pin Assignment

Lead Free

Halogen Free

Package

1

2

3

Packing

UDN302L-AE3-R

UDN302G-AE3-R

SOT-23

S

G

D

Tape Reel

MARKING

NC03

L: Lead Free

G: Halogen Free

类似零件编号 - UDN302L-AE3-R

制造商	部件名	数据表	功能描述
Unisonic Technologies	UDN302L-AE3-R	206Kb / 4P	P-CHANNEL 2.5V SPECIFIED POWERTRENCH MOSFET
VBsemi Electronics Co.,...	UDN302L-AE3-R	502Kb / 9P	P-Channel 30 V (D-S) MOSFET

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