数据搜索系统，热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

预览 PDF HTML

UP2003L-TN3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 UP2003L-TN3-R
功能描述  P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UP2003L-TN3-R 数据表(HTML) 2 Page - Unisonic Technologies

  UP2003L-TN3-R Datasheet HTML 1Page - Unisonic Technologies UP2003L-TN3-R Datasheet HTML 2Page - Unisonic Technologies UP2003L-TN3-R Datasheet HTML 3Page - Unisonic Technologies UP2003L-TN3-R Datasheet HTML 4Page - Unisonic Technologies UP2003L-TN3-R Datasheet HTML 5Page - Unisonic Technologies  
Zoom Inzoom in Zoom Outzoom out
 2 / 5 page
background image
UP2003
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-202.B
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Gate Source voltage
VGSS
±20
V
Continuous Drain Current
ID
-9
Pulsed Drain Current (Note 1)
IDM
-50
A
Power Dissipation
PD
2.5
W
Junction Temperature
TJ
+150
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction-to-Ambient
θJA
50
°C/W
Junction-to-Case
θJC
25
°C/W
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, ID=-250µA
-25
V
VDS =-24 V, VGS =0 V
-1
Drain Source Leakage Current
IDSS
VDS =-20 V, VGS =0 V
-10
µA
Gate-Body Leakage Current
IGSS
VDS =0 V, VGS =±20V
±100
nA
ON CHARACTERISTICS
Gate-Threshold Voltage
VGS(TH)
VDS =VGS, ID =-250 µA
-1.0
-1.5
-3.0
V
On-State Drain Current (Note 2)
ID(ON)
VDS = -5V, VGS = -10V
-50
A
VGS =-4.5 V, ID =-7 A
25
35
Drain-Source On-Resistance (Note 2)
RDS(ON)
VGS =-10 V, ID =-9 A
15
20
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
1610
Output Capacitance
COSS
410
Reverse Transfer Capacitance
CRSS
VDS =-15 V, VGS =0V, f=1MHz
200
pF
SWITCHING PARAMETERS
(Note 3)
Gate to Source Charge
QG
17
24
Gate Charge at Threshold
QGS
5
Gate to Drain Charge
QGD
VDS =-0.5V(BR)DSS, VGS =-10 V,
ID =-9 A
6
nC
Turn-ON Delay Time
tD(ON)
6.2
9.3
Turn-ON Rise Time
tR
10
Turn-OFF Delay Time
tD(OFF)
18
Turn-ON Delay Time
tD(ON)
10
Turn-OFF Fall-Time
tF
VDS =-15V, ID≈-1A, VGS =-10V,
RGS =6Ω ,RL=1Ω
5
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Continuous Forward Current
IS
-2.1
Diode Pulse Current (Note 1)
ISM
-4
A
Forward Voltage (Note 2)
VSD
IF=IS, VGS=0 V
-1.2
V
Note: 1. Pulse width limited by maximum junction temperature.
2. Pulse test: Pulse Width ≤ 300μsec, Duty Cycle ≤ 2%
3. Independent of operating temperature.



Html Pages

1 2 3 4 5


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com