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UP2003L-TN3-R 数据表(PDF) 1 Page - Unisonic Technologies |
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UP2003L-TN3-R 数据表(HTML) 1 Page - Unisonic Technologies |
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1 / 5 page ![]() UNISONIC TECHNOLOGIES CO., LTD UP2003 Power MOSFET www.unisonic.com.tw 1 of 5 Copyright © 2008 Unisonic Technologies Co., Ltd QW-R502-202.B P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UP2003 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * VDS(V)=-25V * ID=-9 A * RDS(ON)<35 mΩ@ VGS =-4.5 V, ID =-7 A * RDS(ON)<20 mΩ@ VGS =-10 V, ID =-9 A SYMBOL 1.Gate 3.Source 2.Drain *Pb-free plating product number: UP2003L ORDERING INFORMATION Ordering Number Pin Assignment Normal Lead Free Plating Package 1 2 3 Packing UP2003-TN3-R UP2003L-TN3-R TO-252 G D S Tape Reel UP2003-TN3-T UP2003L-TN3-T TO-252 G D S Tube |
类似零件编号 - UP2003L-TN3-R |
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类似说明 - UP2003L-TN3-R |
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