UT2306

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-130.D

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

±8

V

Continuous Drain Current

3.5

A

Pulsed Drain Current (Note 1, 2)

14

A

Power Dissipation

0.83

W

Junction Temperature

+150

℃

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

150

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

30

V

Drain-Source Leakage Current

1

μA

Gate-Source Leakage Current

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

1

1.5

2

V

Drain-Source On-State Resistance (Note 2)

42

65

mΩ

70

90

DYNAMIC CHARACTERISTICS

Input Capacitance

400

pF

Output Capacitance

80

pF

Reverse Transfer Capacitance

45

pF

SWITCHING CHARACTERISTICS

Turn-ON Delay Time

10

19

ns

Turn-ON Rise Time

8

15

ns

Turn-OFF Delay Time

19

35

ns

Turn-OFF Fall Time

6.2

12

ns

Total Gate Charge

12.5

16

nC

Gate-Source Charge

2.4

nC

Gate-Drain Charge

1.3

nC

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage(Note2)

0.8

1.3

V

Maximum Continuous Drain-Source Diode

Forward Current

1.3

A

2. Pulse width ≤300us, duty cycle ≤2%.

3. Surface mounted on FR4 board t≦10sec.