| 数据搜索系统,热门电子元器件搜索 |
|
UT2306L-AE2-R 数据表(PDF) 3 Page - Unisonic Technologies |
|
|
|||||||||||||||||||||||||||||
UT2306L-AE2-R 数据表(HTML) 3 Page - Unisonic Technologies |
|
3 / 5 page ![]() UT2306 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 5 www.unisonic.com.tw QW-R502-130.D TYPICAL CHARACTERISTICS VGS=10V VGS=5V 02468 10 0 20 40 60 80 100 120 Drain Current,ID (A) Drain-Source On Resistance IDS=250μA Gate Threshold Voltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 Junction Temperature,TJ (℃) TJ=25℃ TJ=150℃ 20 10 1 0.0 0.4 0.8 1.2 1.6 2.0 Source-Drain Voltage,VSD (V) Source-Drain Diode Forward VGS=10V IDS=3.5A 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 150 125 100 RON@TJ=25℃:42mΩ Junction Temperature,TJ (℃) Drain-Source On Resistance |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |