UT2312

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-205.D

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

20

V

Gate-Source Voltage

±8

V

Continuous Drain Current

5

A

Pulsed Drain Current

15

A

Power Dissipation (Ta =25°C)

1.25

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction to Ambient

100

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

20

V

Zero Gate Voltage Drain Current

1.0

µA

Gate–Body Leakage, Forward

±100

nA

ON CHARACTERISTICS

Gate-Threshold Voltage

0.45

V

25

33

mΩ

Static Drain–Source On–Resistance

35

40

mΩ

On-State Drain Current

15

A

Forward Transconductance

20

S

DYNAMIC PARAMETERS

Input Capacitance

900

pF

Output Capacitance

140

pF

Reverse Transfer Capacitance

100

pF

SWITCHING PARAMETERS

Total Gate Charge

11

14

nC

Gate Source Charge

1.4

nC

Gate Drain Charge

2.2

nC

Turn-ON Delay Time

15

25

ns

Turn-ON Rise Time

40

60

ns

Turn-OFF Delay Time

48

70

ns

Turn-OFF Fall-Time

31

45

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

0.75

1.2

V

Max. Diode Forward Current

1.6

A

Notes: Pulse test; pulse width ≤300μs, duty cycle≤2%