UT2312G-AE3-R datasheet(1/3 Pages) UTC

部件名	UT2312G-AE3-R

功能描述	20V N-CHANNEL ENHANCEMENT MODE MOSFET

PDF	3 Pages

Scroll/Zoom	100%

制造商	UTC [Unisonic Technologies]

网页	http://www.utc-ic.com

标志

1 / 3 page

UNISONIC TECHNOLOGIES CO., LTD

UT2312

Power MOSFET

www.unisonic.com.tw

1 of 3

QW-R502-205.D

20V N-CHANNEL

ENHANCEMENT MODE MOSFET

DESCRIPTION

The UT2312 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with low gate

voltages. This device is suitable for use as a load switch or in PWM

applications.

FEATURES

* RDS(ON) = 33 mΩ @VGS = 4.5 V

* RDS(ON) = 40 mΩ @VGS = 2.5 V

* Advanced trench process technology

* Excellent thermal and electrical capabilities

* High density cell design for ultra low on-resistance

SYMBOL

2.Gate

1.Source

3.Drain

ORDERING INFORMATION

Ordering Number

Pin Assignment

Lead Free

Halogen Free

Package

1

2

3

Packing

UT2312L-AE3-R

UT2312G-AE3-R

SOT-23

S

G

D

Tape Reel

MARKING

23N

L: Lead Free

G: Halogen Free

类似零件编号 - UT2312G-AE3-R

制造商	部件名	数据表	功能描述
Unisonic Technologies	UT2312G-AE3-R	174Kb / 3P	N-CHANNEL ENHANCEMENT MODE MOSFET

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