UT4957

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 5

www.unisonic.com.tw

QW-R502-279.A

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-30

V

Gate-Source Voltage

±20

V

Continuous Drain Current

-7.7

A

Pulsed Drain Current (Note 2)

-30

A

Power Dissipation

2

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction-to-Ambient

62.5

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-30

V

Breakdown Voltage Temperature

Coefficient

-0.02

V/°C

Drain-Source Leakage Current

-1

µA

Gate-Source Leakage Current

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

-1

-3

V

20

24

Static Drain-Source On-Resistance

(Note)

30

36

mΩ

DYNAMIC PARAMETERS

Input Capacitance

1670 2670

pF

Output Capacitance

530

pF

Reverse Transfer Capacitance

435

pF

SWITCHING PARAMETERS

Turn-ON Delay Time (Note)

14

ns

Turn-ON Rise Time

11

ns

Turn-OFF Delay Time

38

ns

Turn-OFF Fall-Time

25

ns

Total Gate Charge (Note)

27

45

nC

Gate Source Charge

5

nC

Gate Drain Charge

18

nC

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Diode Forward Voltage

-1.2

V

Body Diode Reverse Recovery Time

35

ns

Body Diode Reverse Recovery

Charge

34

nC

Note: Pulse width <300us , duty cycle <2%.