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UT4957G-S08-R 数据表(PDF) 4 Page - Unisonic Technologies |
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UT4957G-S08-R 数据表(HTML) 4 Page - Unisonic Technologies |
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4 / 5 page ![]() UT4957 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 4 of 5 www.unisonic.com.tw QW-R502-279.A TYPICAL CHARACTERISTICS Drain Current vs. Gate Threshold Voltage Gate Threshold Voltage, VTH (V) Drain Current vs. Drain-Source Breakdown Voltage Drain-Source Breakdown Voltage, BVDSS(V) 0 50 250 100 150 200 300 350 400 450 0 1.0 0.5 0 30 10 20 40 2.0 1.5 0 50 250 100 150 200 300 Drain-Source On-State Resistance Characteristics Drain to Source Voltage, VDS (mV) 150 12 0 0 4 8 10 2 100 50 6 200 VGS=-10V, ID=-7A VGS=-5V, ID=-4.5A |
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